Photocurrent multiplication characteristics of zinc phthalocyanine organic thin film transistor

被引：0
作者：
Y. S. Zhang
D. X. Wang
Z. Y. Wang
Y. Y. Wang
机构：
[1] Harbin University of Science and Technology,Key Laboratory of Engineering Dielectrics and Its Application, Department of Electronic Science and Technology
来源：
Optical and Quantum Electronics | 2016年 / 48卷
关键词：
Photocurrent multiplication characteristics; Organic thin film transistor; ZnPc; Photoelectric responsivity;
D O I：
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学科分类号：
摘要：
Organic thin film transistors have been fabricated by vacuum evaporation and magnetron sputtering. The structure of ZnPc organic thin film transistor is ITO/ZnPc/Al/ZnPc/Cu. ZnPc material has good photosensitive properties, which is the active layer in this photoelectric device. The performance of this device is superior by detecting this device and analyzing its photoelectric characteristics, When the 351 nm light irradiates the device, we can observe operating current increased obviously. The maximum value of β is 214.97. When Vec = 3 V, photocurrent amplification factor changes in the range of 1.92–2.76. Moreover, the photoelectric responsivity of this device is very high. When Vec = 3 V, photoelectric responsivity can reach 5.347 A/W.
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