Thin magnetite films on an oxidized silicon surface: Raman spectroscopy study

被引:0
|
作者
V. A. Vikulov
V. V. Balashev
T. A. Pisarenko
A. A. Dimitriev
V. V. Korobtsov
机构
[1] Russian Academy of Sciences,Institute of Automation and Control Processes, Far East Branch
[2] Far Eastern Federal University,School of Natural Sciences
来源
Technical Physics Letters | 2012年 / 38卷
关键词
Magnetite; Technical Physic Letter; Reflection High Energy Electron Diffraction; Reactive Sputtering; Reflection High Energy Electron Diffraction Pattern;
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学科分类号
摘要
Polycrystalline films of magnetite (Fe3O4) formed by the reactive sputtering of iron in oxygen on Si(001) substrates covered by thin (1.4 nm) or thick (1200 nm) SiO2 layers have been studied by Raman spectroscopy. It is established that (i) the α-Fe2O3 phase is formed due to the laser-induced heating in magnetite films synthesized on thick SiO2 layers and (ii) the formation of α-Fe2O3 phase depends on the thickness of the buffer SiO2 layer.
引用
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页码:772 / 775
页数:3
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