Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated with Femtosecond Laser Pulses

被引：0
作者：
K. N. Denisova
A. S. Il’in
M. N. Martyshov
A. S. Vorontsov
机构：
[1] Moscow State University,
来源：
Physics of the Solid State | 2018年 / 60卷
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摘要：
A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon (a-Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped a-Si: H samples. The differences in conductivity between undoped and doped a-Si: H samples vanish almost completely after irradiation with an energy density of 150–160 mJ/cm2.
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页码：640 / 643
页数：3
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