Is self-heating responsible for the current collapse in GaN HEMTs?

被引：0
作者：
Balaji Padmanabhan
Dragica Vasileska
Stephen M. Goodnick
机构：
[1] Arizona State University,
来源：
Journal of Computational Electronics | 2012年 / 11卷
关键词：
GaN HEMTs; Bias polarization; Self-heating; Current collapse;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
AlGaN/GaN high-electron mobility transistors (HEMTs) are a very promising technology for switching and radio frequency power applications due to the high saturation velocity and large breakdown field of the GaN material. However, the electrical reliability of this material system in both the on and the off-state operation regimes is still a fundamental problem to be solved before the widespread use of this technology can be made.
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页码：129 / 136
页数：7
相关论文
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