Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides

被引：0
|
作者：
E. D. Mishina
N. E. Sherstyuk
A. P. Shestakova
S. D. Lavrov
S. V. Semin
A. S. Sigov
A. Mitioglu
S. Anghel
L. Kulyuk
机构：
[1] Moscow State Technical University of Radio Engineering,Institute of Applied Physics
[2] Electronics,Institute for Molecules and Materials
[3] and Automation,Ruhr
[4] Academy of Sciences of Moldova,Universität Bochum
[5] Radboud University Nijmegen,undefined
[6] Laboratoire National des Champs Magnétiques Intenses,undefined
[7] Anorganische Chemie III,undefined
来源：
Semiconductors | 2015年 / 49卷
关键词：
Atomic Force Microscopy Image; Second Harmonic Generation; Photo Luminescence; Layer Edge; Exciton Luminescence;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results of studying the optical properties of nanoscale single crystals of MoS2:Cl2 and WS2:Br2 semiconductor compounds are presented. In microscopic images obtained at the wavelength of the second (400 nm), edge effects are detected, which consist in enhancement or reduction in the second-harmonic signal intensity. Unlike previously proposed interference mechanisms of edge effects, non-interference mechanisms are considered. The occurrence of edge effects is associated with either an increased Cl2 and Br2 halogen molecule concentration or with an electrically induced second harmonic caused by band bending at the edges of individual crystal layers.
引用
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页码：791 / 796
页数：5
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