Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

被引：0
|
作者：
L. M. Sorokin
A. S. Tregubova
M. P. Shcheglov
A. A. Lebedev
N. S. Savkina
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Physics of the Solid State | 2000年 / 42卷
关键词：
Silicon; Reflection; Carbide; Growth Condition; Optical Microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The structural perfection of silicon carbide substrates and homoepitaxial layers grown on the substrates by sublimation has been studied by x-ray diffraction (topography and diffractometry) and optical microscopy. The optimum diffraction conditions (hkil reflections, radiation wavelength λ, and recording geometry) for revealing “micropipes” of the dislocation nature are determined. It is shown that the growth conditions used make it possible to obtain highly perfect epitaxial layers.
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页码：1422 / 1426
页数：4
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