Design and Investigation of Doped Triple Metal Double Gate Vertical TFET for Performance Enhancement

被引：0
作者：
Girish Wadhwa
Jeetendra Singh
Balwider Raj
机构：
[1] NIT Jalandhar,
[2] NIT Sikkim,undefined
[3] NITTTR Chandigarh,undefined
来源：
Silicon | 2021年 / 13卷
关键词：
VTFET; Triple metal gate; Work function; Ambipolarity; Subthreshold Slope;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A Triple-Metal-Gate Vertical Tunnel FET (TMG-VTFET) on the doped silicon body is proposed in this paper. The metal gate is partitioned into three sections in the designed structure, and the work function of the middle section is kept higher as compare to the two other metal gate sections. The difference of the work function and the band gaps between the sources to channel and drain to channel interface builds an in-channel barrier potential that controls the electrons tunneling and ambipolar current effectively. Work function engineering along with TMG structure modulation is carried out to achieve an optimized TMG-VTFET design. The investigation of designed TMG-VTFET is done using the simulation results of the TCAD Silvaco tool and intuitive explanations are given for device behavior. The optimally designed structure exhibits improved performance like a high ON and OFF current ratio (ION/IOFF > 1012), low Sub-threshold Slop (SS < 35 mV/Dec), and an improved ION current in the range of 10−4A/μm.
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页码：1839 / 1849
页数：10
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