Field-effect passivation on silicon nanowire solar cells

被引：0
作者：
Anna Dalmau Mallorquí
Esther Alarcón-Lladó
Ignasi Canales Mundet
Amirreza Kiani
Bénédicte Demaurex
Stefaan De Wolf
Andreas Menzel
Margrit Zacharias
Anna Fontcuberta i Morral
机构：
[1] École Polytechnique Fédérale de Lausanne,Laboratoire des Matériaux Semiconducteurs
[2] École Polytechnique Fédérale de Lausanne,Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT)
[3] Albert-Ludwigs-University,Nanotechnology, Institute of Microsystems Engineering (IMTEK)
来源：
Nano Research | 2015年 / 8卷
关键词：
field-effect; passivation; nanowire; surface recombination; solar cell;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.
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页码：673 / 681
页数：8
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