Formation of Oxygen-Containing Centers in Irradiated Silicon Crystals during Annealing in the Temperature Range of 450–700°С

被引：1
作者：
Talkachova E.A. [1 ]
Murin L.I. [1 ]
Medvedeva I.F. [2 ]
Korshunov F.P. [1 ]
Markevich V.P. [3 ]
机构：
[1] Scientific-Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk
[2] Belarusian Medical State University, Minsk
[3] Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Manchester
来源：
Talkachova, E.A. (talkachova@physics.by); Murin, L.I. (murin@ifttp.bas-net.by); Korshunov, F.P. (korshun@ifttp.bas-net.by); Medvedeva, I.F. (medvedeva@ifttp.bas-net.by); Markevich, V.P. (V.Markevich@manchester.ac.uk) | 1600年 / Pleiades journals卷 / 11期
关键词：
annealing; IR absorption; irradiation; silicon; vacancy-oxygen-related complexes;
D O I：
10.1134/S2075113320050330
中图分类号：
学科分类号：
摘要：
Abstract: The processes associated with transformations of oxygen-related radiation-induced defects in Czochralski-grown silicon crystals irradiated with fast electrons or neutrons and subjected to heat-treatment in the temperature range of 450–700°C have been studied by means of IR absorption spectroscopy. It is found that, upon disappearance of the VO3 and VO4 defects, new vacancy-oxygen-related complexes, which give rise to a number of vibrational absorption bands in the wavenumber range of 980–1115 cm–1, are formed. It is argued that these complexes are radiation-induced VOm centers (m ≥ 5), which serve as nucleation centers of enhanced oxygen precipitation in silicon. © 2020, Pleiades Publishing, Ltd.
引用
收藏
页码：1078 / 1082
页数：4
相关论文
共 10 条
  • [1] Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C
    E. P. Neustroev
    S. A. Smagulova
    I. V. Antonova
    L. N. Safronov
    Semiconductors, 2004, 38 : 758 - 762
  • [2] Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in silicon
    Bothe, Karsten
    Herlufsen, Sandra
    Murphy, John D.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (03)
  • [3] Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450-650 °C under hydrostatic pressure
    Surma, B
    Londos, CA
    Emtsev, VV
    Misiuk, A
    Bukowski, A
    Potsidi, MS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3): : 339 - 343
  • [4] Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk
    Vasilév Y.B.
    Verezub N.A.
    Mezhennyi M.V.
    Prosolovich V.S.
    Prostomolotov A.I.
    Reznik V.Y.
    Russian Microelectronics, 1600, Maik Nauka Publishing / Springer SBM (42): : 467 - 476
  • [5] Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation
    V. A. Perevoshchikov
    V. D. Skupov
    Technical Physics Letters, 1999, 25 : 315 - 316
  • [6] Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation
    Perevoshchikov, VA
    Skupov, VD
    TECHNICAL PHYSICS LETTERS, 1999, 25 (04) : 315 - 316
  • [7] Role of oxygen migration in the kinetics of the phase separation of nonstoichiometric silicon oxide films during high-temperature annealing
    Sarikov, A.
    Litovchenko, V.
    Lisovskyy, I.
    Maidanchuk, I.
    Zlobin, S.
    APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [8] Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing
    Kanemura, Takahisa
    Kato, Koichi
    Tanimoto, Hiroyoshi
    Aoki, Nobutoshi
    Toyoshima, Yoshiaki
    2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013), 2013, : 41 - 44
  • [9] Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants
    Giri, PK
    Galvagno, G
    La Ferla, A
    Rimini, E
    Coffa, S
    Raineri, V
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 186 - 191
  • [10] Formation of silicon nanocrystals in Si—SiO2—α-Si—SiO2heterostructures during high-temperature annealing: Experiment and simulation
    Neizvestny I.G.
    Volodin V.A.
    Kamaev G.N.
    Cherkova S.G.
    Usenkov S.V.
    Shwartz N.L.
    Optoelectronics, Instrumentation and Data Processing, 2016, 52 (5) : 486 - 495
1