Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

被引：0

作者：

Zongyou Yin

Xiaohong Tang

Jixuan Zhang

Jinghua Zhao

Sentosa Deny

Hao Gong

机构：

[1] Nanyang Technological University,Photonics Research Center, School of Electrical & Electronic Engineering

[2] National University of Singapore,Department of Materials Science & Engineering

来源：

Journal of Nanoparticle Research | 2009年 / 11卷

关键词：

Photoluminescence; Quantum dots; Graded barrier; Crystal quality; State filling; Nanocomposites;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded InxGa1−xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded InxGa1−xAs top barrier layer of the structure. The QDs’ ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs’ PL emission is sensitive to the QD size.

引用

页码：1947 / 1955

页数：8

共 41 条

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