Nanostructured a-Si:H films obtained by silane decomposition in a magnetron chamber

被引：0
作者：
O. A. Golikova
M. M. Kazanin
A. N. Kuznetsov
E. V. Bogdanova
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2000年 / 34卷
关键词：
Silane; Magnetic Material; High Stability; Electromagnetism; Deposition Temperature;
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学科分类号：
摘要：
Nanostructured a-Si:H films grown by the MASD method at various deposition temperatures (Ts=300–390°C) were studied. Among these films, those “on the verge of crystallinity” are of particular interest, because they tend to crystallize. In addition, although their electron-transport parameters are slightly inferior to those of conventional device-grade a-Si:H, they are preferable because of the higher stability of their photoconductivity under exposure to light.
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页码：1085 / 1089
页数：4
相关论文
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