Effect of the Crystal Structure on the Electrical Properties of Thin-Film PZT Structures

被引:0
|
作者
L. A. Delimova
E. V. Gushchina
N. V. Zaitseva
D. S. Seregin
K. A. Vorotilov
A. S. Sigov
机构
[1] Russian Academy of Sciences,Ioffe Institute
[2] Moscow Technological University MIREA,undefined
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
A new method of two-stage crystallization of lead zirconate–titanate (PZT) films using a seed sublayer with a low excess lead content has been proposed and realized. A seed layer with a strong texture of perovskite Pe(111) grains is formed from a solution with a lead excess of 0–5 wt %; the fast growth of the grains is provided by the deposition of the main film from a solution with high lead content. As a result, a strong Pe(111) texture with complete suppression of the Pe(100) orientation forms. An analysis of current–voltage dependences of the transient currents and the distributions of the local conductivity measured by the contact AFM method reveals two various mechanisms of current percolation that are determined by traps in the bulk and at the perovskite grain interfaces.
引用
收藏
页码:553 / 558
页数:5
相关论文
共 50 条
  • [1] Effect of the Crystal Structure on the Electrical Properties of Thin-Film PZT Structures
    Delimova, L. A.
    Gushchina, E. V.
    Zaitseva, N. V.
    Seregin, D. S.
    Vorotilov, K. A.
    Sigov, A. S.
    PHYSICS OF THE SOLID STATE, 2018, 60 (03) : 553 - 558
  • [2] Ageing of thin-film capacitor structures based on PZT
    Delimova, L. A.
    Grekhov, I. V.
    Mashovets, D. V.
    Titkov, I. E.
    Afanasjev, V. P.
    Afanasjev, P. V.
    Kramar, G. P.
    Petrov, A. A.
    FERROELECTRICS, 2007, 348 : 427 - +
  • [3] Auger Spectroscopy and properties of Ir(Pt)/PZT(PZT/PT)/Ir nanosized thin-film structures
    Afanas'ev, V. P.
    Afanas'ev, P. V.
    Grekhov, I. V.
    Delimova, L. A.
    Kim, S. -P.
    Koo, J. -M.
    Mashovets, D. V.
    Pankrashkin, A. V.
    Park, Y.
    Petrov, A. A.
    Shin, S.
    PHYSICS OF THE SOLID STATE, 2006, 48 (06) : 1200 - 1204
  • [4] Auger spectroscopy and properties of Ir(Pt)/PZT(PZT/PT)/Ir nanosized thin-film structures
    V. P. Afanas’ev
    P. V. Afanas’ev
    I. V. Grekhov
    L. A. Delimova
    S. -P. Kim
    J. -M. Koo
    D. V. Mashovets
    A. V. Pankrashkin
    Y. Park
    A. A. Petrov
    S. Shin
    Physics of the Solid State, 2006, 48 : 1200 - 1204
  • [5] ELECTRICAL PROPERTIES OF THIN-FILM SEMICONDUCTORS
    HAM, FS
    MATTIS, DC
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (02) : 143 - 151
  • [6] ELECTRICAL CHARACTERIZATION OF THIN-FILM SIMOX STRUCTURES
    ZHU, WH
    LIN, CL
    SHI, ZY
    ZOU, SC
    HEMMENT, PLF
    NEJIM, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 218 - 221
  • [7] The effect of transfer printing on pentacene thin-film crystal structure
    Shao, Y.
    Solin, S. A.
    Hines, D. R.
    Williams, E. D.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (04)
  • [8] Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide
    Afanas'ev, VP
    Mosina, GN
    Petrov, AA
    Pronin, IP
    Sorokin, LM
    Tarakanov, EA
    TECHNICAL PHYSICS LETTERS, 2001, 27 (06) : 467 - 469
  • [9] Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide
    V. P. Afanas’ev
    G. N. Mosina
    A. A. Petrov
    I. P. Pronin
    L. M. Sorokin
    E. A. Tarakanov
    Technical Physics Letters, 2001, 27 : 467 - 469
  • [10] STRUCTURE AND ELECTRICAL PROPERTIES OF AU-SIO THIN-FILM CERMETS
    MORRIS, JE
    THIN SOLID FILMS, 1972, 11 (02) : 299 - &