Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

被引：0
|
作者：
E. V. Kalinina
G. F. Kholuyanov
G. A. Onushkin
D. V. Davydov
A. M. Strel’chuk
A. O. Konstantinov
A. Hallén
A. Yu. Nikiforov
V. A. Skuratov
K. Havancsak
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] ACREO AB,undefined
[3] Royal Institute of Technology (Department of Electronics),undefined
[4] Specialized Electronic Systems,undefined
[5] Joint Institute for Nuclear Research,undefined
[6] Eötvös University,undefined
来源：
Semiconductors | 2004年 / 38卷
关键词：
Electrical Property; Chemical Vapor Deposition; Epitaxial Layer; Fast Neutron; Schottky Barrier;
D O I：
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中图分类号：
学科分类号：
摘要：
Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p+-n-n+ diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.
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页码：1187 / 1191
页数：4
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