Gate-induced superconductivity in atomically thin MoS 2 crystals

被引：0
作者：
Costanzo D. [1 ]
Jo S. [1 ]
Berger H. [2 ]
Morpurgo A.F. [1 ]
机构：
[1] DQMP and GAP, Université de Genève, 24 quai Ernest Ansermet, Geneva
[2] Institut de Physique de la Matiere Complexe, Ecole Polytechnique Federale de Lausanne, Lausanne
来源：
Nature Nanotechnology | 2016年 / 11卷 / 4期
关键词：
D O I：
10.1038/nnano.2015.314
中图分类号：
学科分类号：
摘要：
When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle bandstructure. Phenomena driven by interactions are also observed, but identifying experimentally systematic trends in their thickness dependence is challenging. Here, we explore the evolution of gate-induced superconductivity in exfoliated MoS 2 multilayers ranging from bulk-like to individual monolayers. We observe a clear transition for all thicknesses down to the ultimate atomic limit, providing the first demonstration of gate-induced superconductivity in atomically thin exfoliated crystals. Additionally, we characterize the superconducting state by measuring the critical temperature TC and magnetic field BC in a large number of multilayer devices while decreasing their thickness. We find that the superconducting properties exhibit a pronounced reduction in TC and BC when going from bilayers to monolayers, for which we discuss possible microscopic mechanisms. © 2016 Macmillan Publishers Limited. All rights reserved.
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页码：339 / 344
页数：5
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