The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

被引：0

作者：

D. V. Gorshkov

G. Yu. Sidorov

I. V. Sabinina

Yu. G. Sidorov

D. V. Marin

M. V. Yakushev

机构：

[1] Rzhanov Institute of Semiconductor Physics,

[2] Siberian Branch,undefined

[3] Russian Academy of Sciences,undefined

来源：

Technical Physics Letters | 2020年 / 46卷

关键词：

CdHgTe; Al; O; atomic layer deposition; –; characteristics; passivating coating.;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：741 / 744

页数：3

共 94 条

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