Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

被引：0

作者：

B. Shen

Y.G. Zhou

Z.Z. Chen

P. Chen

R. Zhang

Y. Shi

Y.D. Zheng

W. Tong

W. Park

机构：

[1] Department of Physics and Laboratory of Solid State Microstructures,

[2] Nanjing University,undefined

[3] Nanjing 210093,undefined

[4] P.R. China,undefined

[5] Phosphor Technology Center of Excellence,undefined

[6] Georgia Institute of Technology,undefined

[7] Atlanta,undefined

[8] Georgia 30332-0560,undefined

[9] USA,undefined

来源：

Applied Physics A | 1999年 / 68卷

关键词：

PACS: 71.55.E; 72.40;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first reported. The deposition temperature is 950 °C, about 100 °C lower than that in normal rf-heating MOCVD growth. The FWHM of GaN (0002) peak of the X-ray diffraction rocking curve is 8.7 arc min. Photoluminescence spectrum of GaN film shows that there is a very strong band-edge emission and no “yellow-band” luminescence. Hall measurement indicates that the n-type background carrier concentration of GaN film is 1.7×1018 cm-3 and the Hall mobility of it is 121.5 cm2/V s. It is suggested that the radiation of light in GaN growth enhances the dissociation of ammonia and decreases the disadvantages of the parasite reaction between trimethylgallium and ammonia.

引用

页码：593 / 596

页数：3