Tunable Electronic Properties of MoS2/SiC Heterostructures: A First-Principles Study

被引:0
作者
Shu Liu
Xiaodan Li
Dongping Meng
Shenghao Li
Xiong Chen
Taotao Hu
机构
[1] University of Shanghai for Science and Technology,College of Science
[2] Northeast Normal University,School of Physics
来源
Journal of Electronic Materials | 2022年 / 51卷
关键词
Tunable electronic properties; heterostructure; first principles; type-II heterojunctions;
D O I
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中图分类号
学科分类号
摘要
Using first-principle calculations based on density functional theory, we have systematically investigated the structural and electronic properties of hybrid systems composed of monolayer MoS2 and SiC. The systems include a MoS2/SiC superlattice, MoS2-SiC hetero-bilayer, and a hetero-trilayer. Among all the superlattices and hetero-bilayers considered, the AA-2 type (Mo atoms are aligned on top of C atoms, S atoms are aligned on top of Si atoms) with type-II band alignment is the most stable model. Strain-induced tunable bandgaps were found in MoS2/SiC hetero-bilayer systems. In addition, the tunable bandgap could also be realized by constructing a hetero-trilayer structure. The tunable band structures make MoS2/SiC hybrid systems promising candidates for future optoelectronic devices.
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页码:3714 / 3726
页数:12
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