Kinetic-energy transport equation for the modeling of ballistic MOSFETs

Using the first two moment equations of the Vlasov equation, we have developed a transport model based on the convective kinetic energy. This K.E. transport model is applied to the simulation of a ballistic gate-all-around MOSFET. The simulation results show that the current increases substantially under ballistic transport compared to the drift-diffusion model. Limitation and errors of this transport model are associated with the one parameter modeling of the stress tensor for the closure of the moment equation hierarchy.