Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

被引：0
作者：
Kangping Liu
Odile Cristini-Robbe
Omar Ibrahim Elmi
Shuang Long Wang
Bin Wei
Ingsong Yu
Xavier Portier
Fabrice Gourbilleau
Didier Stiévenard
Tao Xu
机构：
[1] Shanghai University,Key Laboratory of Advanced Display and System Application
[2] Université de Lille 1,PHLAM, UMR8523
[3] Université de Djibouti,Department of Materials Science and Engineering
[4] Groupe de Recherche PCM,IEMN, UMR8520
[5] Faculté des Sciences,undefined
[6] National Dong Hwa University,undefined
[7] CIMAP,undefined
[8] Normandie Univ,undefined
[9] ENSICAEN,undefined
[10] UNICAEN,undefined
[11] CEA,undefined
[12] CNRS,undefined
[13] Université de Lille 1,undefined
来源：
Nanoscale Research Letters | 2019年 / 14卷
关键词：
Surface passivation; Atomic layer deposition; Alumina layer; Structural/electrical properties; Silicon p-n junction;
D O I：
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中图分类号：
学科分类号：
摘要：
Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.
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