Preparation and Ferroelectric Properties of YMnO3 Thin Films with c-Axis Preferred Orientation by the Sol-Gel Method

被引:2
作者
Hiroya Kitahata
Kiyoharu Tadanaga
Tsutomu Minami
Norifumi Fujimura
Taichiro Ito
机构
[1] Osaka Prefecture University,Department of Applied Materials Science, Graduate School of Engineering
[2] Sakai,undefined
来源
Journal of Sol-Gel Science and Technology | 2000年 / 19卷
关键词
YMnO; thin film; ferroelectricity; non-volatile ferroelectric memory devices; -axis preferred orientation;
D O I
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中图分类号
学科分类号
摘要
Hexagonal YMnO3 has a ferroelectric property with an optimal remanent polarization along the c-axis. The c-axis oriented YMnO3 thin films with a small leakage current were prepared by the sol-gel dipping method. The c-axis orientation of the films was promoted by the addition of diethanolamine to the Mn precursor solution. A heat treatment with multiple steps led to a dense film structure with fine grains. The dense structure resulted in the decrease of the leakage current. Furthermore, when the films were heat-treated in a vacuum, the leakage current became considerably small and the ferroelectricity of the YMnO3 thin films was observed even at room temperature.
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页码:589 / 593
页数:4
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