Design for control: Temperature uniformity in rapid thermal processor

被引:0
作者
Ian Huang
Hsin-Heng Liu
Cheng-Ching Yu
机构
[1] National Taiwan University of Sci. Technol.,Department of Chemical Engineering
来源
Korean Journal of Chemical Engineering | 2000年 / 17卷
关键词
Rapid Thermal Processor; Temperature Control; Temperature Uniformity; Thermal Stress Analysis; Design for Control;
D O I
暂无
中图分类号
学科分类号
摘要
It is well known that the design of the heating source imposes an inherent limitation on the performance of the rapid thermal processor (RTP). In this work, the similarities and differences between flat and angled reflectors are studied. Thediscontinuous characteristic of the angled reflector can be used to compensate for the edge heat loss of the thin wafer and, consequently, a better temperature uniformity can be achieved. A design procedure is proposed to place the lamp ring as well as the angle of the reflectors. For the control system design, the measurement selection criterion of Huang et al. is employed to find candidate measurement sets followed by a structured singular value criterion. Once the control structure is determined, multivariable temperature controllers are designed according to the internal model control (IMC) principle. From process insight, a fairly simple nonlinear compensation is also devised. Simulation results show that, while only half of the thermal budget is used, improved temperature uniformity can be obtained by using the proposed approach.
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页码:111 / 117
页数:6
相关论文
共 40 条
  • [1] Apte P. P.(1992)Rapid Thermal Processing Uniformity Using Multivariable Control of a Circularly Symmetric 3 Zone Lamp IEEE Trans. Semicond. Manuf. 5 180-180
  • [2] Saraswat K. C.(1995)Modeling and Control of Microelectronics Materials Processing Computers Chem. Engng. 19 1-1
  • [3] Badgwell T. A.(1993)Model Identification in Rapid Thermal Processing System IEEE Trans. Semicond. Manuf. 6 233-233
  • [4] Breedijk T.(1995)Thermal Modeling of a Wafer in a Rapid Thermal Processor IEEE Trans. Semicond. Manuf. 8 432-432
  • [5] Bushman S. G.(1997)Analyses of Thermal Stress and Control Schemes for Fast Temperature Ramps of Batch Furnaces IEEE Trans. Semiconduct. Manuf. 10 433-433
  • [6] Butler S.W.(1991)A Model for Rapid Thermal Processing: Achieving Uniformity Through Lamp Control IEEE Trans. Semicond. Manuf. 4 9-9
  • [7] Chatterjee S.(1998)The Effect of Multilayer Patterns on Thermal Stress During Rapid Thermal Processing of Silicon Wafers IEEE Trans. Semiconduct. Manuf. 11 99-99
  • [8] Edgar T. F.(1988)Thermal and Stress Analysis of Semiconductor Wafer in a Rapid Thermal Processing Oven IEEE Trans. Semicond. Manuf. 1 105-105
  • [9] Toprac A. J.(1996)A Systematic Approach to Simulating Rapid Thermal Processing Systems J. Electrochem. Soc. 143 2035-2035
  • [10] Trachtenberg I.(1992)Optimization of Wafer Temperature Uniformity in Rapid Thermal Processing System IEEE Trans. Electron. Dev. 39 205-205