The influence of anodic oxide on the electron concentration in n-GaAs

被引：0

作者：

V. M. Kalygina

V. V. Vishnikina

А. N. Zarubin

Yu. S. Petrova

М. S. Skakunov

О. P. Тоlbanov

А. V. Тyazhev

Т. М. Yaskevich

机构：

[1] V. D. Kuznetsov Siberian Physical-Technical Institute of National Research Tomsk State University,

[2] National Research Tomsk State University,undefined

来源：

Russian Physics Journal | 2014年 / 56卷

关键词：

anodic oxide annealing; oxygen plasma; defects; gallium vacancies;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The influence of anodic oxide on the electron concentration near the Ga2O3–n-GaAs interface is studied. The coordinate distribution of electrons is obtained as a function of anodizing voltage, duration of treatment of oxide films in oxygen plasma, temperature, and annealing time. A decrease in the electron concentration in a semiconductor after deposition of anodic oxide is accounted for by the appearance of Ga vacancies which act as acceptors in gallium arsenide.

引用

页码：984 / 989

页数：5