Synthesis of single-crystalline topological insulator Bi2Se3 nanomaterials with various morphologies

被引：0
作者：
Yi-Seul Park
Jin Seok Lee
机构：
[1] Sookmyung Women’s University,Department of Chemistry
来源：
Journal of Nanoparticle Research | 2014年 / 16卷
关键词：
Layered-structure; Bi; Se; nanomaterial; Topological insulator; Various morphology; Growth mechanism; Spintronics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the synthesis and characterization of layer-structure Bi2Se3 nanomaterials. Bi2Se3 nanomaterial has attracted many researchers, because it has a unique three-dimensional topological insulator property characterized by a metallic surface which coexists with an insulating interior. This can be achieved by having large surface-to-volume ratio in the nanomaterial. We synthesized highly single-crystalline topological insulator Bi2Se3 nanomaterials with various morphologies, including straight nanowires, zig-zag nanowires, and nanobelts, by adjusting experimental parameters such as the growth temperature, pressure, and carrier gas flow rate. The results show that the width and length of Bi2Se3 nanowires increase significantly with increasing values of each parameter. Furthermore, we studied the growth mechanism of individual morphologies based on the layered structure of Bi2Se3.
引用
收藏
相关论文
共 83 条
[1]  
Cui HM(2004)Sonochemical synthesis of bismuth selenide nanobelts at room temperature J Cryst Growth 271 456-461
[2]  
Liu H(1995)Surface tension of liquid metals: results from measurements on ground and in space Phys Rev Lett 75 4043-4046
[3]  
Wang JY(2007)Topological insulators in three dimensions Phys Rev Lett 98 106803-12658
[4]  
Li X(2002)Self-assembled nanowire-nanoribbon junction arrays of ZnO J Phys Chem B 106 12653-333
[5]  
Han F(2010)Topological insulator nanowires and nanoribbons Nano Lett 10 329-491
[6]  
Boughton RI(2003)Nanoscale science and technology: building a big future from small things MRS Bull 28 486-709
[7]  
Egry I(2005)Structure and bonding properties of (Bi Phys Rev B 72 184101-11
[8]  
Lohoefer G(2004)Se J Am Chem Soc 126 708-1949
[9]  
Jacobs G(2007)) Phys Rev B 75 121306-203
[10]  
Fu L(2004)(Bi Chem Phys Lett 385 8-1516
123456789