Vegard’s law deviation in band gap and bowing parameter of AlxIn1-xN

被引：0
|
作者：
B.-T. Liou
S.-H. Yen
Y.-K. Kuo
机构：
[1] Hsiuping Institute of Technology,Department of Mechanical Engineering
[2] National Changhua University of Education,Department of Physics
来源：
Applied Physics A | 2005年 / 81卷
关键词：
Thin Film; Operating Procedure; Electronic Material; Lattice Constant; Wurtzite;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Numerical simulation based on first-principle calculations is applied to study the wurtzite AlxIn1-xN. Simulation results suggest that the Vegard’s law deviation parameter is 0.063 ± 0.014 Å for the a lattice constant, and -0.160 ± 0.015 Å for the c lattice constant. The band gap bowing parameter is 3.668 ± 0.147 eV with the lattice constants by means of the minimized equilibrium energy, and 3.457 ± 0.152 eV with the lattice constants derived from Vegard’s law.
引用
收藏
页码：651 / 655
页数：4
相关论文
共 50 条
  • [11] Synthesis and Characterization AlxIn1-xN Semiconductor Thin Films
    RamaMurthy, Vedam
    Srivani, Alla
    Veeraraghavaiah, G.
    JOURNAL OF ADVANCED PHYSICS, 2014, 3 (03) : 234 - 236
  • [12] Spinodal decomposition and the luminescence of Er in AlxIn1-xN:Er layers
    Yang, Miao
    Weng, Ye
    Strunk, Horst P.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (01): : 209 - 212
  • [13] Pyroelectric Effect and Thermoelectric Efficiency of AlxIn1-xN/GaN Heterostructure
    Sahu, Subhranshu Sekhar
    Sahoo, Bijoy Kumar
    3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019), 2020, 2220
  • [14] Band-gap bowing parameter of the AlxGa1-xN derived from theoretical simulation
    Kuo, YK
    Lin, WW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (01): : 73 - 74
  • [15] Band-gap bowing parameter of the AlxGa1-xN derived from theoretical simulation
    Kuo, Y.-K. (ykuo@cc.ncue.edu.tw), 1600, Japan Society of Applied Physics (41):
  • [16] Band-gap bowing parameter of the InxGa1-xN derived from theoretical simulation
    Kuo, YK
    Lin, WW
    Lin, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (5A): : 3157 - 3158
  • [17] Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures
    Pandey, Saurabh
    Fraboni, Beatrice
    Cavalcoli, Daniela
    Minj, Albert
    Cavallini, Anna
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 986 - 988
  • [18] Band gap bowing parameter of In1-xAlxN
    Jones, R. E.
    Broesler, R.
    Yu, K. M.
    Ager, J. W., III
    Haller, E. E.
    Walukiewicz, W.
    Chen, X.
    Schaff, W. J.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
  • [19] Energy band bowing parameter in AlxGa1-xN alloys
    Yun, F
    Reshchikov, MA
    He, L
    King, T
    Morkoç, H
    Novak, SW
    Wei, LC
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4837 - 4839
  • [20] Large band gap bowing of InxGa1-xN alloys
    McCluskey, MD
    Van de Walle, CG
    Master, CP
    Romano, LT
    Johnson, NM
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2725 - 2726
12345