The detection limit of curved InGaAs/AlGaAs/GaAs hall bars

被引：2

作者：

Chesnitskiy A.V. ^{[1
]}

Mikhantiev E.A. ^{[1
]}

机构：

[1] Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, pr. Ak. Lavrent’eva 13, Novosibirsk

来源：

Russian Microelectronics | 2016年 / 45卷 / 02期

关键词：

Semiconducting indium gallium arsenide - Spectral density - Semiconducting indium - Tin compounds;

D O I：

10.1134/S1063739716020025

中图分类号：

学科分类号：

摘要：

The work is devoted to the study of noise characteristics of curved Hall bars based on InGaAs/AlGaAs/GaAs semiconductor heterostructures. The noise spectral density SN(f) was investigated experimentally and the magnetic field detection limit BN of a flat and similar Hall bar rolled in a tube was defined. The low-frequency spectra of 1/f noise were studied and the dimensionless Hooge noise parameter αH was determined. The ability to use the curved Hall bars in the devices for measuring weak magnetic fields (<1 μT) was predicted. © 2016, Pleiades Publishing, Ltd.

引用

页码：105 / 111

页数：6

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