Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well

被引：0
|
作者：
S. O. Slipchenko
A. A. Podoskin
N. A. Pikhtin
A. Yu. Leshko
A. V. Rozhkov
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
Technical Physics Letters | 2013年 / 39卷
关键词：
Technical Physic Letter; Semiconductor Laser; Waveguide Layer; Threshold Current Density; Injection Laser;
D O I：
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学科分类号：
摘要：
Semiconductor InGaAs/GaAs injection lasers emitting at λ = 1065 nm have been created with waveguides based on a single InGaAs quantum well. It is found that internal optical losses are determined by the width of an undoped region confined between the n and p type emitters. The room-temperature total output optical power in lasers with 100 μm aperture amounted up to about 2 W at a radiation beam divergence of 15° in the plane perpendicular to the p-n junction.
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页码：364 / 366
页数：2
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