Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well

被引：0

作者：

S. O. Slipchenko

A. A. Podoskin

N. A. Pikhtin

A. Yu. Leshko

A. V. Rozhkov

I. S. Tarasov

机构：

[1] Russian Academy of Sciences,Ioffe Physical Technical Institute

来源：

Technical Physics Letters | 2013年 / 39卷

关键词：

Technical Physic Letter; Semiconductor Laser; Waveguide Layer; Threshold Current Density; Injection Laser;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Semiconductor InGaAs/GaAs injection lasers emitting at λ = 1065 nm have been created with waveguides based on a single InGaAs quantum well. It is found that internal optical losses are determined by the width of an undoped region confined between the n and p type emitters. The room-temperature total output optical power in lasers with 100 μm aperture amounted up to about 2 W at a radiation beam divergence of 15° in the plane perpendicular to the p-n junction.

引用

页码：364 / 366

页数：2

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