Coherent control of single spins in silicon carbide at room temperature

被引:0
|
作者
Widmann M. [1 ]
Lee S.-Y. [1 ]
Rendler T. [1 ]
Son N.T. [2 ]
Fedder H. [1 ]
Paik S. [1 ]
Yang L.-P. [3 ]
Zhao N. [3 ]
Yang S. [1 ]
Booker I. [2 ]
Denisenko A. [1 ]
Jamali M. [1 ]
Ali Momenzadeh S. [1 ]
Gerhardt I. [1 ]
Ohshima T. [4 ]
Gali A. [5 ,6 ]
Janzén E. [2 ]
Wrachtrup J. [1 ]
机构
[1] 3rd Institute of Physics, Research Center SCOPE, University of Stuttgart, Pfaenwaldring 57, Stuttgart
[2] Department of Physics Chemistry and Biology, Linköping University, Linköping
[3] Beijing Computational Science Research Center, Beijing
[4] Japan Atomic Energy Agency, Takasaki, Gunma
[5] Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, Budapest
[6] Department of Atomic Physics, Budapest University of Technology and Economics, Budafokiút 8, Budapest
基金
中国国家自然科学基金; 日本学术振兴会; 匈牙利科学研究基金会;
关键词
D O I
10.1038/nmat4145
中图分类号
学科分类号
摘要
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond or individual phosphorus dopants in silicon have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems: it has a large bandgap with deep defects and benefits from mature fabrication techniques. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology. © 2015 Macmillan Publishers Limited. All rights reserved.
引用
收藏
页码:164 / 168
页数:4
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