Semiconductor diode in a long cavity in the active mode-locking regime

被引：0
作者：
V. M. Klement’ev
I. I. Korel
A. A. Kurbatov
E. A. Titov
机构：
[1] Russian Academy of Sciences,Institute of Laser Physics, Siberian Branch
[2] Novosibirsk State Technical University,undefined
来源：
Optics and Spectroscopy | 2014年 / 116卷
关键词：
Electric Field Strength; Cavity Mode; Spontaneous Polarization; Gain Bandwidth; Diode Current;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A set of equations governing field amplitudes and phases that describe the single-mode regime of oscillation of a semiconductor diode in a long cavity is derived. The set of equations is generalized to a multimode regime, taking into consideration modulation of the diode current with frequency close to the mode beat frequency. The exact solution obtained for a simple case reveals the existence of an ultrashort-pulse generation regime. The shape of the pulse, its width, and the number of modes involved in its formation are determined.
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页码：291 / 297
页数：6
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