Noise-created bistability and stochastic resonance of impurities diffusing in a semiconductor layer

被引：0
作者：
M. Asfaw
B. Aragie
M. Bekele
机构：
[1] California State University Northridge,Department of Physics and Astronomy
[2] Addis Ababa University,Department of Physics
来源：
The European Physical Journal B | 2011年 / 79卷
关键词：
Stochastic Resonance; Parameter Choice; Potential Minimum; Semiconductor Layer; Noise Strength;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We investigate the dynamics of impurities walking along a semiconductor layer assisted by thermal noise of strength D and external harmonic potential V(x). Applying a nonhomogeneous hot temperature in the vicinity of the potential minimum may modify the external potential into a bistable effective potential. We propose the ways of mobilizing and eradicating the unwanted impurities along the semiconductor layer. Furthermore, the thermally activated rate of hopping for the impurities as a function of the model parameters is studied in high barrier limit. Via two state approximation, we also study the stochastic resonance (SR) of the impurities dynamics where the same noise source that induces the dynamics also induces the transition from mono-stable to bistable state which leads to SR in the presence of time varying field.
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页码：371 / 376
页数：5
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