Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform

被引：1
|
作者：
Li Z. [1 ]
Zhou L. [1 ]
Xiao X. [1 ]
Chu T. [1 ]
Yu Y. [1 ]
Yu J. [1 ]
机构：
[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors (IS), Chinese Academy of Sciences (CAS), Beijing
来源：
Frontiers of Optoelectronics | 2012年 / 5卷 / 1期
基金：
中国国家自然科学基金;
关键词：
extinction ratio (ER); integration; optical modulator; silicon photonics;
D O I：
10.1007/s12200-012-0197-6
中图分类号：
学科分类号：
摘要：
Silicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3. 2 Gbps. © 2012 Higher Education Press and Springer-Verlag Berlin Heidelberg.
引用
收藏
页码：90 / 93
页数：3
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