Optical nonlinearities in GaSe and InSe crystals upon laser excitation

被引：0
|
作者：
A. G. Kyazym-zade
V. M. Salmanov
A. G. Guseinov
L. G. Gasanova
R. M. Mamedov
机构：
[1] Baku State University,
来源：
Optics and Spectroscopy | 2014年 / 116卷
关键词：
Nonlinear Absorption; Mott Transition; Nonequilibrium Carrier; Absorption Band Edge; Exciton Resonance;
D O I：
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中图分类号：
学科分类号：
摘要：
The nonlinear absorption of light and its temporal evolution in the vicinity of exciton resonance in layered GaSe and InSe crystals under high optical excitation have been experimentally investigated. The decisive factor for the observed temporal dependence of the absorption coefficient and its dependence on the excitation intensity is screening excitons by nonequilibrium-carrier plasma. It is shown that the increase in the transmittance in the absorption-band edge in GaSe with a simultaneous blue shift of the band edge is caused by filling the energy bands under high optical excitation.
引用
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页码：595 / 598
页数：3
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