Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

被引：0
作者：
A. S. Saidov
A. Sh. Razzakov
D. V. Saparov
机构：
[1] Academy of Sciences of the Republic of Uzbekistan,Physical Engineering Institute “Solar Physics” Research and Production Corporation
来源：
Technical Physics Letters | 2002年 / 28卷
关键词：
Solid Solution; Liquid Phase; GaAs; Growth Condition; Temperature Interval;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Epitaxial layers of (Sn2)1−x(InSb)x solid solutions were grown from an indium-based solution melt confined between two horizontal GaAs substrates in a temperature interval from 325 to 200°C. Scanning microprobe and X-ray diffraction investigations of the GaAs-(Sn2)1−x(InSb)x heterostructures showed that crystallographic perfection of the epitaxial layers depends on the epitaxial growth conditions.
引用
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页码：927 / 928
页数：1
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