Direct band gap luminescence from Ge on Si pin diodes

被引：22

作者：

Kasper E. ^{[1
]}

Oehme M. ^{[1
]}

Werner J. ^{[1
]}

Aguirov T. ^{[2
]}

Kittler M. ^{[2
]}

机构：

[1] Institut für Halbleitertechnik (IHT), University of Stuttgart, Stuttgart

[2] Joint Lab IHP/BTU Cottbus, Cottbus

来源：

Frontiers of Optoelectronics | 2012年 / 5卷 / 3期

关键词：

direct band gap; electroluminescence (EL); germanium (Ge); photoluminescence (PL);

D O I：

10.1007/s12200-012-0235-4

中图分类号：

学科分类号：

摘要：

Germanium (Ge) pin photodiodes show clear direct band gap emission at room temperature, as grown on bulk silicon in both photoluminescence (PL) and electroluminescence (EL). PL stems from the top contact layer with highly doped Ge because of strong absorption of visible laser light excitation (532 nm). EL stems from the recombination of injected carriers in the undoped intrinsic layer. The difference in peak positions for PL (0. 73 eV) and EL (0. 80 eV) is explained by band gap narrowing from high doping in n+-top layer. A superlinear increase of EL with current density is explained by a rising ratio of direct/indirect electron densities when quasi Fermi energy level rises into the conduction band. An analytical model for the direct/indirect electron density ratio is given using simplifying assumptions. © 2012 Higher Education Press and Springer-Verlag Berlin Heidelberg.

引用

页码：256 / 260

页数：4

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