Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source

被引：0

作者：

J.-Y. Zhang

I.W. Boyd

M.B. Mooney

P.K. Hurley

J.T. Beechinor

B.J. O’Sullivan

P.V. Kelly

G.M. Crean

J.-P. Senateur

C. Jimenez

M. Paillous

机构：

[1] Electronic and Electrical Engineering,

[2] University College London,undefined

[3] Torrington Place,undefined

[4] London WC1E 7JE,undefined

[5] UK,undefined

[6] National Microelectronics Research Centre,undefined

[7] Lee Maltings,undefined

[8] Prospect Row,undefined

[9] Cork,undefined

[10] Ireland,undefined

[11] Institut National Polytechnique de Grenoble,undefined

[12] École Nationale Superieure de Physique de Grenoble – LMGP,undefined

[13] B.P. 46 38402 St. Martin d’Heres,undefined

[14] France,undefined

来源：

Applied Physics A | 2000年 / 70卷 / 6期

关键词：

PACS: 42.72.+h; 61.80.Ba; 81.60.Cp; 85.50.Na;

D O I：

10.1007/PL00021075

中图分类号：

学科分类号：

摘要：

We report the growth of thin tantalum pentoxide films on Si (100) by ultraviolet-assisted injection liquid source (UVILS) chemical vapor deposition (CVD) at low temperatures (200–350 °C). This new technique combines the intense radiation from an excimer lamp (λ=222 nm) with a novel injection liquid source capable of delivering precisely controllable quantities of a liquid metalorganic precursor into the CVD chamber. The composition and optical properties of the oxides were determined using a variety of standard characterization methods. After optimization of the deposition parameters, the best layers were incorporated into simple MOS test structures to enable electrical characterization. Refractive index values of 2.09±0.07, fixed oxide charge content of <5×1010 cm-2, breakdown fields higher than 2 MV/cm and dielectric constant values of 18–24 were readily achievable in the as-deposited films. These properties compare favorably with those for layers prepared by conventional thermal-CVD at significantly higher temperatures of 500 °C.

引用

页码：647 / 649

页数：2