Interfacial transformations in the a-SiC/a-Si/6H-SiC structure caused by high-temperature (1500°C) annealing

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作者：
P. A. Ivanov
T. P. Samsonova
机构：
[1] Russian Academy of Sciences,Ioffe Physico
来源：
Technical Physics Letters | 2008年 / 34卷
关键词：
82.33.Pt;
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摘要：
We have studied the reactions that take place at interfaces in an a-SiC/a-Si/6H-SiC sandwich structure, which was obtained by the sequential deposition of amorphous silicon (a-Si) and amorphous silicon carbide (a-SiC) onto a 6H-SiC substrate by ion sputtering in vacuum and then annealed at 1500°C (i.e., above the melting point of silicon). It is shown that the annealing leads to complete îdissipationî of the silicon film in SiC, probably as a result of the dissolution of carbon in the silicon melt and the diffusion of silicon into SiC.
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