Probing the imine silylenoid HN=SiNaF and its insertions reaction with R–H (R=F, OH, NH2, CH3) using DFT

The geometries and isomerization of the imine silylenoid HN=SiNaF as well as its insertion reactions with some R–H molecules have been systematically investigated theoretically, where R=F, OH, NH2, and CH3, respectively. The barrier heights for the four insertion reactions are 67.7, 115.6, 153.5, and 271.5 kJ/mol at the B3LYP/6-311+G* level of theory, respectively. Here, all the mechanisms of the four reactions are identical to each other, i.e., a stable intermediate has been formed during the insertion reaction. Then, the intermediate could dissociate into the substituted silylene (HN=SiHR) and NaF with a barrier corresponding to their respective dissociation energies. Correspondingly, the reaction energies for the four reactions are 71.8, 95.5, 123.3, and 207.6 kJ/mol, respectively, which are linearly correlated with the calculated barrier heights. Furthermore, the effects of halogen substitutions (F, Cl, and Br) on the reaction activity have also been discussed. As a result, the relative reactivity among the four insertion reactions should be as follows: H–F > H–OH > H–NH2 > H–CH3.