Features of the Temperature Dependence of Graphene Oxide Resistivity

被引：1

作者：

Babaev A.A. ^{[1
]}

Zobov M.E. ^{[1
]}

Terukov E.I. ^{[2
]}

Levitskii V.S. ^{[2
]}

机构：

[1] Amirkhanov Institute of Physics, Dagestan Science Center, Russian Academy of Sciences, Makhachkala

[2] Ioffe Institute, St. Petersburg

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2018年 / 82卷 / 07期

关键词：

Graphene - Temperature distribution - Glass substrates;

D O I：

10.3103/S1062873818070079

中图分类号：

学科分类号：

摘要：

The Raman spectra and the temperature dependence of the resistivity of graphene oxide grown upon continuous heating and cooling on a glass substrate is studied in air in the temperature interval of 300–550 K. It is established that the intensity of the D-peak falls relative to the G-peak, the maximum of which shifts toward lower frequencies in Raman spectra. Partial removal of oxygen-containing functional groups is accompanied by a reduction in resistivity from 5.6 × 109 to 5.4 × 109 Ω. In the temperature intervals of 300–350 K and 300–375 K, the resistivity is constant upon graphene oxide heating and cooling, respectively. © 2018, Allerton Press, Inc.

引用

页码：815 / 816

页数：1

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