Enhancing oxidation rate of 4H–SiC by oxygen ion implantation

被引：0
作者：
Min Liu
Shuyuan Zhang
Xiang Yang
Xue Chen
Zhongchao Fan
Xiaodong Wang
Fuhua Yang
Chao Ma
Zhi He
机构：
[1] Institute of Semiconductors,Engineering Research Center for Semiconductor Integrated Technology
[2] Chinese Academy of Sciences,College of Materials Science and Opto
[3] University of Chinese Academy of Science,Electronic Technology
[4] Institute of Semiconductors,State Key Laboratory for Superlattices and Microstructures
[5] Chinese Academy of Sciences,School of Electronic, Electrical and Communication Engineering
[6] University of Chinese Academy of Sciences,undefined
[7] Institute of Microelectronics,undefined
[8] Chinese Academy of Sciences,undefined
来源：
Journal of Materials Science | 2019年 / 54卷
关键词：
Thermal Oxidation Rate; Critical Breakdown Electric Field; SiO2 Film; Crystalline Damage; Stopping And Range Of Ions In Matter (SRIM);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this study, the thermal oxidation rate of oxygen ion (O+) implanted 4H–silicon carbide (SiC) was investigated. And the critical breakdown electric field (Ebreakdown) and capacitance–voltage (CV) curve of the grown oxide (SiO2) film were also evaluated. It is found that the thermal SiO2 growth rate on 4H–SiC (0001) face was significantly improved by O+ implantation. Ebreakdown test results showed that the unconsumed amorphous and damaged crystalline layer under the grown SiO2 contained defects leading to an inferior critical breakdown field. Thus, in order to obtain a high-quality SiO2 film, the oxidation process should be designed delicately so that the damaged layer by implantation could be fully consumed.
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页码：1147 / 1152
页数：5
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