Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas

被引:0
作者
Tsai-Yu Huang
Chi-Te Liang
Yang Fang Chen
Michelle Y Simmons
Gil-Ho Kim
David A Ritchie
机构
[1] National Taiwan University,Department of Physics
[2] University of New South Wales,School of Physics
[3] Sungkyunkwan University,School of Electronic and Electrical Engineering
[4] J. J. Thomson Avenue,Cavendish Laboratory
来源
Nanoscale Research Letters | / 8卷
关键词
Spin; g-factor; Disorder;
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摘要
We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform direct measurements of the spin gap for different LLs. The measured g-factor g is greatly enhanced over its bulk value in GaAs (0.44) due to electron–electron (e-e) interactions. Our results suggest that both the spin gap and g determined from conventional activation energy studies can be very different from those obtained by direct measurements.
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