Interface structure of AlN/TiN/MgO(001) prepared by molecular beam epitaxy

被引：0
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作者：
X. L. Ma
Y. Sugawara
N. Shibata
Y. Ikuhara
机构：
[1] Japan Fine Ceramics Center,Department of Materials Science
[2] University of Tokyo,undefined
来源：
Journal of Materials Research | 1999年 / 14卷
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摘要：
Thin AlN films were grown by molecular beam epitaxy on MgO(001) substrate with a thin TiN buffer layer. The as-prepared AlN/TiN/MgO(001) interfaces have been characterized by cross-sectional high-resolution electron microscopy (HREM). It is found that the thin TiN buffer layer is epitaxially grown on the MgO(001) substrate and hexagonal AlN epitaxially on the as-received TiN(001). Based on the growth orientation relationship and HREM images, atomistic structure models for the AlN/TiN interface are proposed, image simulated, and compared with experimental images.
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页码：4685 / 4689
页数：4
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