Effect of Temperature on Performance Characteristics with Varying Defect States Parameters in TIPS-pentacene Based OTFTs on n++ Silicon Substrate

被引：0
作者：
Sushil Kumar Jain
Amit Mahesh Joshi
Deepak Bharti
机构：
[1] Malaviya National Institute of Technology,Department of Electronics and Communication
来源：
Silicon | 2023年 / 15卷
关键词：
OTFT; Defects; Simulation; Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The paper presents the effect of temperature on performance characteristics for different defect states parameters in 6,13(bis-triisopropylsilylethynyl) pentacene (TIPS-pentacene) based organic thin transistor on n++ silicon substrate with (SiO2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{SiO}_{\varvec{2}}$$\end{document}) as a dielectric. The simulated device characteristics reasonably match the experimental device characteristics, enabling calibration of the simulator. Following simulator calibration, a detailed 2-D physics-based numerical simulation is performed to demonstrate the effect of temperature on the device’s performance characteristics for different defect states parameters. First, the effect of temperature on the transfer characteristics of OTFT is investigated, and it is found that the off-current (IOFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{I}_{\varvec{OFF}}$$\end{document}) is much larger temperature-dependent than the on-current (ION\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{I}_{\varvec{ON}}$$\end{document}). Next, the simulation is performed to evaluate the effect of temperature on the device performance characteristics for different defect states parameters. This numerical study is an important factor for the performance of OTFT in various real-time commercial applications.
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页码：6397 / 6406
页数：9
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