Spin injection in n-type resonant tunneling diodes

被引：0
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作者：
Vanessa Orsi Gordo
Leonilson KS Herval
Helder VA Galeti
Yara Galvão Gobato
Maria JSP Brasil
Gilmar E Marques
Mohamed Henini
Robert J Airey
机构：
[1] Federal University of São Carlos,Physics Department
[2] Gleb Wataghin Physics Institute,School of Physics and Astronomy
[3] UNICAMP,Department of Electronic and Electrical Engineering
[4] University of Nottingham,undefined
[5] University of Sheffield,undefined
来源：
Nanoscale Research Letters | / 7卷
关键词：
Spintronics; nanostructure; resonant tunneling diode; photoluminescence;
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摘要：
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X−). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.
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