Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types

被引：0
作者：
P. V. Seredin
A. S. Lenshin
I. N. Arsentiev
A. V. Zhabotinskii
D. N. Nikolaev
I. S. Tarasov
V. V. Shamakhov
Tatiana Prutskij
Harald Leiste
Monika Rinke
机构：
[1] Voronezh State University,Ioffe Physical–Technical Institute
[2] Russian Academy of Sciences,Instituto de Ciencias
[3] Benemérita Universidad Autónoma de Puebla,undefined
[4] Karlsruhe Nano Micro Facility,undefined
来源：
Semiconductors | 2017年 / 51卷
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摘要：
The structural, optical, and energy properties of epitaxial AlxGa1 – xAs:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of AlxGa1–xAs:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.
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页码：122 / 130
页数：8
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