Discontinuous Galerkin approach for the simulation of charge transport in graphene

被引：0
作者：
Giovanni Nastasi
Vittorio Romano
机构：
[1] University of Catania,Department of Mathematics and Computer Science
来源：
Ricerche di Matematica | 2021年 / 70卷
关键词：
Boltzmann equation; Charge transport; Graphene; Discontinuous Galerkin method; Graphene field effect transistor (GFET); 82C70; 65M60;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The Boltzmann equation for charge transport in monolayer graphene is numerically solved by using a discontinuous Galerkin method. The numerical fluxes are based on a uniform non oscillatory reconstruction. The numerical scheme has been tested by simulating the electron dynamics in a graphene field effect transistor. To the best of our knowledge the presented simulations are the first ones using a full Boltzmann equation in graphene devices.
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页码：149 / 165
页数：16
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