Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

被引：0

作者：

O. V. Podorozhniy

A. V. Rumyantsev

R. L. Volkov

N. I. Borgardt

机构：

[1] National Research University of Electronic Technology,

来源：

Semiconductors | 2023年 / 57卷

关键词：

focused ion beam; sputtering; silicon; Monte Carlo simulation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：58 / 64

页数：6

共 82 条

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