Size effect in electrophysical properties of Ru thin films: experimental investigation and a quantitative analysis of electrical parameters

The present work shows the results of the investigations of size effect in electrophysical properties of Ru thin films. For stabilization electrophysical properties, samples were annealed during two cycles “heating ↔ cooling” up to the annealing temperature of 800 K in a vacuum chamber. Size dependences of resistivity, temperature coefficient of resistance, and activation energy for Ru films within a range of thickness from 10 to 100 nm were received. The interpretation of experimental data in terms of approximation relationships of Tosser A.J. and Tellier C.R. (linearized model and the model of isotropic scattering) was done. It was demonstrated that the reduction of resistivity with a thickness increases associated with a mechanism of surface and grain boundary scattering of the conducting electrons.