Electromigration in Line-Type Cu/Sn-Bi/Cu Solder Joints

被引:0
作者
X. Gu
Y.C. Chan
机构
[1] City University of Hong Kong,Department of Electronic Engineering
来源
Journal of Electronic Materials | 2008年 / 37卷
关键词
Electromigration; line-type Cu/Sn-Bi/Cu solder joints; microstructure;
D O I
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中图分类号
学科分类号
摘要
In this study, the different electromigration (EM) behaviors of eutectic Sn-Bi solder in the solid and molten states were clarified using line-type Cu/Sn-Bi/Cu solder joints. When the eutectic Sn-Bi solder was in the solid state during the EM test, a Bi-rich layer formed at the anode side while a Sn-rich band formed at the cathode side, and the intermetallic compound (IMC) at the cathode side was thicker than that at the anode side. The growth of the Bi-rich layer exhibited a linear dependence on the time of stressing. While the actual temperature of the solder joint increased to 140°C and the solder was in a molten state or partially molten state, two separate Bi-rich layers formed at the anode side and a great many Cu6Sn5 IMC precipitates formed between the two Bi-rich layers. Also, the IMC layer at the cathode side was thinner than that at the anode side. With a current-crowding-reduced structure, the products of diffusivity and effective charge number of Bi in the eutectic Cu/Sn-Bi/Cu solder joints stressed with current density of 5 × 103 A/cm2 at 35°C, 55°C, and 75°C were calculated.
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页码:1721 / 1726
页数:5
相关论文
共 52 条
[1]  
Tu K.N.(2003)undefined J. Appl. Phys. 94 5451-undefined
[2]  
Chen C.(2007)undefined J. Mater. Sci. Mater. Electron. 18 259-undefined
[3]  
Liang S.W.(2007)undefined Microelectron. Reliab. 47 1273-undefined
[4]  
Lai Y.-S.(2006)undefined J. Appl. Phys. 99 023520-undefined
[5]  
Chen K.-M.(2006)undefined Microelectron. Reliab. 46 41-undefined
[6]  
Kao C.-L.(2007)undefined Scr. Mater. 57 513-undefined
[7]  
Lee C.-W.(2005)undefined J. Appl. Phys. 97 063514-undefined
[8]  
Chiu Y.-T.(2005)undefined J. Electon. Mater. 34 1363-undefined
[9]  
Nah J.W.(2006)undefined J. Mater. Res. 21 962-undefined
[10]  
Ren F.(2007)undefined J. Electon. Mater. 36 168-undefined