Calibration of residual stress difference of MetalMUMPs silicon nitride films

被引：0
|
作者：
J. S. Chang
Siyuan He
X. Wang
机构：
[1] Ryerson University,Department of Mechanical and Industrial Engineering
来源：
Microsystem Technologies | 2010年 / 16卷
关键词：
Residual Stress; Silicon Nitride; Cantilever Beam; Beam Width; Beam Length;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The metal multi-user MEMS processes (MetalMUMPs) provide one nickel film, two silicon nitride films and one polysilicon film for constructing various nickel MEMS devices. The two silicon nitride films are either bonded together as a bi-layered structure or they sandwich the polysilicon film to form a tri-layered structure to support nickel structures. The residual stress difference of the two silicon nitride films causes undesired deformations of suspended MetalMUMPs devices. In this paper, the residual stress difference of the two MetalMUMPs silicon nitride thin films is calibrated and the result is 169 MPa. The Young’s modulus of the MetalMUMPs nitride films is also measured, which is 209 GPa.
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页码：625 / 632
页数：7
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