Anisotropic Carrier Transport in n-Doped 6H-SiC

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作者：
R. T. Ferracioli
C. G. Rodrigues
R. Luzzi
机构：
[1] School of Exact Sciences and Computing,
[2] Pontifical Catholic University,undefined
[3] Condensed Matter Physics Department,undefined
[4] Institute of Physics Gleb Wataghin,undefined
来源：
Physics of the Solid State | 2020年 / 62卷
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页码：110 / 115
页数：5
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